APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 1 ? 7 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings these devices are sensitive to electrostatic di scharge. proper handling pro cedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 95 i d continuous drain current t c = 80c 70 i dm pulsed drain current 260 a v gs gate - source voltage 20 v r dson drain - source on resistance 24 m p d maximum power dissipation t c = 25c 462 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj application ? ac and dc motor control ? switched mode power supplies ? power factor correction (pfc) ? interleaved pfc features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a single boost of twice the current capability ? rohs compliant dual boost chopper super junction mosfet power module v dss = 600v r dson = 24m max @ tj = 25c i d = 95a @ tc = 25c
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 350 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 600 a r ds(on) drain ? source on resistance v gs = 10v, i d = 47.5a 24 m v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 14.4 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 17 nf q g total gate charge 300 q gs gate ? source charge 68 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 95a 102 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 95a r g = 2.5 45 ns e on turn-on switching energy 1350 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 95a ; r g = 2.5 1040 j e on turn-on switching energy 2200 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 95a ; r g = 2.5 1270 j chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 100 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current t c = 80c 100 a i f = 100a 1.6 2 i f = 200a 2 v f diode forward voltage i f = 100a t j = 125c 1.3 v t j = 25c 160 t rr reverse recovery time t j = 125c 220 ns t j = 25c 290 q rr reverse recovery charge i f = 100a v r = 400v di/dt=200a/s t j = 125c 1530 nc
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 3 ? 7 thermal and package characteristics symbol characteristic min typ max unit transistor 0.27 r thjc junction to case thermal resistance chopper diode 0.55 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 4 ? 7 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 80 160 240 320 400 480 560 640 720 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 40 80 120 160 200 240 280 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 40 80 120 160 200 240 280 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 95a 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 5 ? 7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 95a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 1000000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 40 80 120 160 200 240 280 320 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =95a t j =25c
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 6 ? 7 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 i d , drain current (a) t r and t f (ns) v ds =400v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 1 2 3 4 0 20 40 60 80 100 120 140 160 i d , drain current (a) switching energy (mj) v ds =400v r g =2.5 ? t j =125c l=100h e on e off 0 1 2 3 4 5 0 5 10 15 20 25 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =95a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 10 20 30 40 50 60 70 80 90 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =2.5 ? t j =125c t c =75c
APTC60VDAM24T3G APTC60VDAM24T3G ? rev 0 september, 2009 www.microsemi.com 7 ? 7 typical chopper diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impeda nce, junction to case vs pulse duration t j =25c t j =125c 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 50 a 100 a 200 a 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 50 a 100 a 200 a 50 100 150 200 250 300 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 50 a 100 a 200 a 0 1 2 3 4 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 25 50 75 100 125 150 25 50 75 100 125 150 175 case temperature (c) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =175c ?coolmos? comprise a new family of transistors developed by in fineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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